Model NO.
OSS65R340DF TO252
Discharging Type
Constant Resistance
Electrolyte
Acid Battery
Certification
RoHS
Description
Extremely Low Switching Loss
Characteristics
Excellent Stability and Uniformity
Applications
PC Power
Industries
LED Lighting
Transport Package
Air
Trademark
Orientalsemiconductor
Origin
China
HS Code
854129000
Production Capacity
20kkkk/Monthly
Type:
Lead-acid Battery
Rated Voltage:
3.6V
Charging Voltage:
4.1V~4.2V
Working Voltage:
3.6V~2.75V
Charging Type:
Constant Current
Wet Shelf Life:
3~5Year
General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® SuperSi series is based on Oriental Semiconductor's unique device design to achieve extremely fast switching characteristics. It is the perfect replacement for the Gallium Nitride (GaN) device in high frequency operations with better ruggedness and cost. It is targeted to meet the most aggressive efficiency standards of power supply systems by pushing both performance and power density to extreme limits.
Features
Applications
Key Performance Parameters
Marking Information
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® SuperSi series is based on Oriental Semiconductor's unique device design to achieve extremely fast switching characteristics. It is the perfect replacement for the Gallium Nitride (GaN) device in high frequency operations with better ruggedness and cost. It is targeted to meet the most aggressive efficiency standards of power supply systems by pushing both performance and power density to extreme limits.
Features
- Low RDS(ON) & FOM
- Extremely low switching loss
- Excellent stability and uniformity
- Easy to design in
Applications
- PD charger
- Large screen display
- Telecom power
- Server power
Key Performance Parameters
| Parameter | Value | Unit |
| VDS, min @ Tj(max) | 700 | V |
| ID, pulse | 36 | A |
| RDS(ON), max @ VGS=10V | 340 | mΩ |
| Qg | 9.6 | nC |
Marking Information
| Product Name | Package | Marking |
| OSS65R340DF | TO252 | OSS65R340D |
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
Thermal Characteristics
Electrical Characteristics at Tj=25°C unless otherwise specified
| Parameter | Symbol | Value | Unit |
| Drain-source voltage | VDS | 650 | V |
| Gate-source voltage | VGS | ±30 | V |
| Continuous drain current1), TC=25 °C | ID | 12 | A |
| Continuous drain current1), TC=100 °C | 7.6 | ||
| Pulsed drain current2), TC=25 °C | ID, pulse | 36 | A |
| Continuous diode forward current1), TC=25 °C | IS | 12 | A |
| Diode pulsed current2), TC=25 °C | IS, pulse | 36 | A |
| Power dissipation3), TC=25 °C | PD | 83 | W |
| Single pulsed avalanche energy5) | EAS | 200 | mJ |
| MOSFET dv/dt ruggedness, VDS=0…480 V | dv/dt | 50 | V/ns |
| Reverse diode dv/dt, VDS=0…480 V, ISD≤ID | dv/dt | 15 | V/ns |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | °C |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| Thermal resistance, junction-case | RθJC | 1.5 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Electrical Characteristics at Tj=25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0 V, ID=250 μA | ||
| 700 | VGS=0 V, ID=250 μA, Tj=150 °C | |||||
| Gate threshold voltage | VGS(th) | 2.9 | 3.9 | V | VDS=VGS, ID=250 μA | |
Drain-source on- state resistance | RDS(ON) | 0.30 | 0.34 | Ω | VGS=10 V, ID=6 A | |
| 0.73 | VGS=10 V, ID=6 A, Tj=150 °C | |||||
| Gate-source leakage current | IGSS | 100 | nA | VGS=30 V | ||
| -100 | VGS=-30 V | |||||
| Drain-source leakage current | IDSS | 1 | μA | VDS=650 V, VGS=0 V |
Dynamic Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Input capacitance | Ciss | 443.5 | pF | VGS=0 V, VDS=50 V, ƒ=100 KHz | ||
| Output capacitance | Coss | 59.6 | pF | |||
| Reverse transfer capacitance | Crss | 1.7 | pF | |||
| Turn-on delay time | td(on) | 22.4 | ns | VGS=10 V, VDS=400 V, RG=2 Ω, ID=6 A | ||
| Rise time | tr | 17.5 | ns | |||
| Turn-off delay time | td(off) | 40.3 | ns | |||
| Fall time | tf | 7.2 | ns |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 9.6 | nC | VGS=10 V, VDS=400 V, ID=6 A | ||
| Gate-source charge | Qgs | 2.2 | nC | |||
| Gate-drain charge | Qgd | 4.5 | nC | |||
| Gate plateau voltage | Vplateau | 6.5 | V |
Body Diode Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Diode forward voltage | VSD | 1.3 | V | IS=12 A, VGS=0 V | ||
| Reverse recovery time | trr | 236.5 | ns | VR=400 V, IS=6 A, di/dt=100 A/μs | ||
| Reverse recovery charge | Qrr | 2.2 | μC | |||
| Peak reverse recovery current | Irrm | 19.1 | A |
Note
- Calculated continuous current based on maximum allowable junction temperature.
- Repetitive rating; pulse width limited by max. junction temperature.
- Pd is based on max. junction temperature, using junction-case thermal resistance.
- The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
- VDD=100 V, VGS=10 V, L=60 mH, starting Tj=25 °C.
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