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EV Charging One Switch To251 Osg90r1K2af Power Mosfet, High Voltage Semiconductor Mosfet, Mode N-Channel Semiconductor Power Mosfet

Product detail

Model NO.

TO251 OSG90R1K2AF

Industries

LED Lighting

Transport Package

Carton

Specification

35x30x37cm

Trademark

Orientalsemiconductor

Origin

China

HS Code

854129000

Production Capacity

20kkkk/Monthly

Type:

Fast EV Charging Station

Certification:

ISO, TUV, RoHS

Warranty:

24 Months

Description:

Extremely Low Switching Loss

Characteristics:

Excellent Stability and Uniformity

Applications:

PC Power

General Description
OSG90R1K2xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications.

Features Applications

Low RDS(on) & FOM Lighting
Extremely low switching loss Hard switching PWM
Excellent stability and uniformity Server power supply
Easy to drive Charger

Key Performance Parameters

1. Absolute Maximum Ratings at Tj=25ºC unless otherwise noted

Parameter	Symbol	Value	Unit
Drain source voltage	VDS	900	V
Gate source voltage	VGS	±30	V
Continuous drain current¹⁾, TC=25 ºC	ID	5	A
Continuous drain current¹⁾, TC=100 ºC	ID	3.2	A
Pulsed drain current²⁾, TC=25 ºC	ID, pulse	15	A
Power dissipation3) for TO251, TO262, TC=25 ºC	PD	83	W
Power dissipation³⁾ for TO220F, TC=25 ºC	PD	31	W
Single pulsed avalanche energy5)	EAS	211	mJ
MOSFET dv/dt ruggedness, VDS=0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID	dv/dt	15	V/ns
Operation and storage temperature	Tstg,Tj	-55 to 150	ºC

&bsp; Thermal Characteristics

Parameter	Symbol	Value		Unit
Parameter	Symbol	TO251/TO262	TO220F	Unit
Thermal resistance, junction-case	RθJC	1.5	4.0	ºC/W
Thermal resistance, junction-ambient4)	RθJA	62	62.5	ºC/W

Electrical Characteristics at Tj=25 ºC unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	900			V	VGS=0 V, ID=250 μA
Drain-source breakdown voltage	BVDSS	960	1070		V	VGS=0 V, ID=250 μA, Tj=150 ºC
Gate threshold voltage	VGS(th)	2.0		4.0	V	VDS=VGS, ID=250 μA
Drain-source on-state resistance	RDS(ON)		1.0	1.2	Ω	VGS=10 V, ID=2 A
Drain-source on-state resistance	RDS(ON)		2.88		Ω	VGS=10 V, ID=2 A, Tj=150 ºC
Gate-source leakage current	IGSS			100	nA	VGS=30 V
Gate-source leakage current	IGSS			-100	nA	VGS=-30 V
Drain-source leakage current	IDSS			10	μA	VDS=900 V, VGS=0 V

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		874.2		pF	VGS=0 V, VDS=50 V, f=100 kHz
Output capacitance	Coss		37.5		pF
Reverse transfer capacitance	Crss		1.7		pF
Turn-on delay time	td(on)		33.23		ns	VGS=10 V, VDS=400 V, RG=33 Ω, ID=5 A
Rise time	tr		26.50		ns
Turn-off delay time	td(off)		44.00		ns
Fall time	tf		17.63		ns

Gate Charge Characteristics

EV Charging One Switch To251 Osg90r1K2af Power Mosfet

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		12.50		nC	ID=5 A, VDS=400 V, VGS=10 V
Gate-source charge	Qgs		3.75		nC
Gate-drain charge	Qgd		4.28		nC
Gate plateau voltage	Vplateau		5.8		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward current	IS			5	A	VGS<Vth
Pulsed source current	ISP			15	A	VGS<Vth
Diode forward voltage	VSD			1.3	V	IS=5 A, VGS=0 V
Reverse recovery time	trr		265.87		ns	VR=400 V, IS=5 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		2.88		μC
Peak reverse recovery current	Irrm		19.51		A

Note

Calculated continuous current based on maximum allowable junction temperature.
Repetitive rating; pulse width limited by max. junction temperature.
Pd is based on max. junction temperature, using junction-case thermal resistance.
The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ºC.
VDD=100 V, RG=47 Ω, L=10 mH, starting Tj=25 ºC.

Marking Information

Product Name	Package	Marking
OSG65R038HZF	TO247	OSG65R038HZ

Absolute Maximum Ratings at Tj=25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	650	V
Gate-source voltage	VGS	±30	V
Continuous drain current¹⁾, TC=25 °C	ID	80	A
Continuous drain current¹⁾, TC=100 °C	ID	50	A
Pulsed drain current²⁾, TC=25 °C	ID, pulse	240	A
Continuous diode forward current¹⁾, TC=25 °C	IS	80	A
Diode pulsed current²⁾, TC=25 °C	IS, pulse	240	A
Power dissipation³⁾ ,TC=25 °C	PD	500	W
Single pulsed avalanche energy5)	EAS	2900	mJ
MOSFET dv/dt ruggedness, VDS=0…480 V	dv/dt	100	V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID	dv/dt	50	V/ns
Operation and storage temperature	Tstg, Tj	-55 to 150	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.25	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	650			V	VGS=0 V, ID=2 mA
Drain-source breakdown voltage	BVDSS	700	770		V	VGS=0 V, ID=2 mA, Tj=150 °C
Gate threshold voltage	VGS(th)	3.0		4.5	V	VDS=VGS, ID=2 mA
Drain-source on-state resistance	RDS(ON)		0.032	0.038	Ω	VGS=10 V, ID=40 A
Drain-source on-state resistance	RDS(ON)		0.083		Ω	VGS=10 V, ID=40 A, Tj=150 °C
Gate-source leakage current	IGSS			100	nA	VGS=30 V
Gate-source leakage current	IGSS			-100	nA	VGS=-30 V
Drain-source leakage current	IDSS			10	μA	VDS=650 V, VGS=0 V
Gate resistance	RG		2.1		Ω	ƒ=1 MHz, Open drain

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		9276		pF	VGS=0 V, VDS=50 V, ƒ=100 kHz
Output capacitance	Coss		486		pF
Reverse transfer capacitance	Crss		12.8		pF
Effective output capacitance, energy related	Co(er)		278		pF	VGS=0 V, VDS=0 V-400 V
Effective output capacitance, time related	Co(tr)		1477		pF	VGS=0 V, VDS=0 V-400 V
Turn-on delay time	td(on)		55.9		ns	VGS=10 V, VDS=400 V, RG=2 Ω, ID=40 A
Rise time	tr		121.2		ns
Turn-off delay time	td(off)		114.2		ns
Fall time	tf		8.75		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		175.0		nC	VGS=10 V, VDS=400 V, ID=40 A
Gate-source charge	Qgs		40.1		nC
Gate-drain charge	Qgd		76.1		nC
Gate plateau voltage	Vplateau		6.4		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=80 A, VGS=0 V
Reverse recovery time	trr		180		ns	IS=30 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		1.5		uC
Peak reverse recovery current	Irrm		15.2		A

Note

Calculated continuous current based on maximum allowable junction temperature.
Repetitive rating; pulse width limited by max. junction temperature.
Pd is based on max. junction temperature, using junction-case thermal resistance.
The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
VDD=300 V, VGS=10 V, L=40 mH, starting Tj=25 °C.

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