OSG60R028HTF
Extremely Low Switching Loss
Excellent Stability and Uniformity
PC Power
LED Lighting
Fast EV Charging Station
ISO, TUV, RoHS
24 Months
Orientalsemiconductor
Air
China
854129000
Product Description
General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.
Features
Applications
Dynamic Characteristics
Gate Charge Characteristics
Body Diode Characteristics
Note
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.
Features
- Low RDS(ON) & FOM
- Extremely low switching loss
- Excellent stability and uniformity
Applications
- PC power
- LED lighting
- Telecom power
- Server power
- EV Charger
- Solar/UPS
Key Performance Parameters
Marking Information
Absolute Maximum Ratings at Tj=25°C unless otherwise noted| Parameter | Value | Unit |
| VDS, min @ Tj(max) | 650 | V |
| ID, pulse | 240 | A |
| RDS(ON) , max @ VGS=10V | 28 | mΩ |
| Qg | 181.8 | nC |
Marking Information
| Product Name | Package | Marking |
| OSG60R028HTF | TO247 | OSG60R028HT |
| Parameter | Symbol | Value | Unit |
| Drain-source voltage | VDS | 600 | V |
| Gate-source voltage | VGS | ±30 | V |
| Continuous drain current1), TC=25 °C | ID | 80 | A |
| Continuous drain current1), TC=100 °C | 50 | ||
| Pulsed drain current2), TC=25 °C | ID, pulse | 240 | A |
| Continuous diode forward current1), TC=25 °C | IS | 80 | A |
| Diode pulsed current2), TC=25 °C | IS, pulse | 240 | A |
| Power dissipation3), TC=25 °C | PD | 455 | W |
| Single pulsed avalanche energy5) | EAS | 1850 | mJ |
| MOSFET dv/dt ruggedness, VDS=0…480 V | dv/dt | 50 | V/ns |
| Reverse diode dv/dt, VDS=0…480 V, ISD≤ID | dv/dt | 15 | V/ns |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | °C |
Thermal Characteristics
Electrical Characteristics at Tj=25°C unless otherwise specified
| Parameter | Symbol | Value | Unit |
| Thermal resistance, junction-case | RθJC | 0.27 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Electrical Characteristics at Tj=25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Drain-source breakdown voltage | BVDSS | 600 | V | VGS=0 V, ID=1 mA | ||
| 650 | VGS=0 V, ID=1 mA, Tj=150 °C | |||||
| Gate threshold voltage | VGS(th) | 2.9 | 3.9 | V | VDS=VGS, ID=2 mA | |
Drain-source on- state resistance | RDS(ON) | 0.024 | 0.028 | Ω | VGS=10 V, ID=40 A | |
| 0.06 | VGS=10 V, ID=40A, Tj=150 °C | |||||
| Gate-source leakage current | IGSS | 100 | nA | VGS=30 V | ||
| -100 | VGS=-30 V | |||||
| Drain-source leakage current | IDSS | 1 | μA | VDS=600 V, VGS=0 V | ||
| Gate resistance | RG | 2.2 | Ω | ƒ=1 MHz, Open drain |
Dynamic Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Input capacitance | Ciss | 7373 | pF | VGS=0 V, VDS=50 V, ƒ=100 KHz | ||
| Output capacitance | Coss | 504 | pF | |||
| Reverse transfer capacitance | Crss | 17 | pF | |||
| Turn-on delay time | td(on) | 42.5 | ns | VGS=10 V, VDS=400 V, RG=2 Ω, ID=40 A | ||
| Rise time | tr | 71 | ns | |||
| Turn-off delay time | td(off) | 126.6 | ns | |||
| Fall time | tf | 3.7 | ns |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 181.8 | nC | VGS=10 V, VDS=400 V, ID=40 A | ||
| Gate-source charge | Qgs | 36.5 | nC | |||
| Gate-drain charge | Qgd | 49.5 | nC | |||
| Gate plateau voltage | Vplateau | 5.5 | V |
Body Diode Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Diode forward voltage | VSD | 1.3 | V | IS=80 A, VGS=0 V | ||
| Reverse recovery time | trr | 584 | ns | VR=400 V, IS=40 A, di/dt=100 A/μs | ||
| Reverse recovery charge | Qrr | 12.8 | μC | |||
| Peak reverse recovery current | Irrm | 39.8 | A |
Note
- Calculated continuous current based on maximum allowable junction temperature.
- Repetitive rating; pulse width limited by max. junction temperature.
- Pd is based on max. junction temperature, using junction-case thermal resistance.
- The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
- VDD=100 V, VGS=10 V, L=79.9 mH, starting Tj=25 °C.
Ordering Information
Product Information
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Oriental Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
| Package Type | Units/ Tube | Tubes/ Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
| TO247-C | 30 | 11 | 330 | 6 | 1980 |
| TO247-J | 30 | 20 | 600 | 5 | 3000 |
Product Information
| Product | Package | Pb Free | RoHS | Halogen Free |
| OSG60R028HTF | TO247 | yes | yes | yes |
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Oriental Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
