MRVS-011-B
Magnetic Displacement Sensor
Analog Type
Angular Displacement
SemiConductor Integrated
Metal
IP67
ISO
Customized
Yuanben
Standard Export Package
φ 10*10mm
Shanghai
Product Description
Differential Magnetoresistive Sensor MRVS-011
The differential magnetoresistive sensor MRVS-011 consists of two series coupled magneto resistors ( InSb/NiSb semiconductor resistors whose value can be magnetically controlled), which are mounted onto an insulated ferrite substrate. The sensor is encapsulated in a metallic or plastic package and has 3 connection terminals. The basic resistance of the total system is 2 x 300Ω. A permanent magnet, which supplies a biasing magnetic field, is fixed on the base of the sensor.
Features
· Sensing over wide rotation speed range
· Robust metallic or plastic housing
· Signal amplitude is speed independent
· Biasing magnet built in
· Best suited for harsh environments
Typical applications
· Speed detection
· Position detection
· Rotation detection
· Angle encoder
· Linear position sensing
Specifications
Diagram
Pictures
The differential magnetoresistive sensor MRVS-011 consists of two series coupled magneto resistors ( InSb/NiSb semiconductor resistors whose value can be magnetically controlled), which are mounted onto an insulated ferrite substrate. The sensor is encapsulated in a metallic or plastic package and has 3 connection terminals. The basic resistance of the total system is 2 x 300Ω. A permanent magnet, which supplies a biasing magnetic field, is fixed on the base of the sensor.
Features
· Sensing over wide rotation speed range
· Robust metallic or plastic housing
· Signal amplitude is speed independent
· Biasing magnet built in
· Best suited for harsh environments
Typical applications
· Speed detection
· Position detection
· Rotation detection
· Angle encoder
· Linear position sensing
Specifications
| Model | MRVS-011B |
| Corresponding Brand Model | Infineon FP210D250-22 |
| Dimensions | Ø10x10mm |
| Maximum power supply Vmax | 10V DC |
| Nominal power supply | 5V DC |
| Total resistance R 1-3 (δ=∞, I≤mA, t=25°C) | 900 Ω - 1600 Ω |
| Center symmetry M=100% (R1-2-R2-3)/R1-2 (δ=∞) | ≤10% |
| Offset voltage (at Vin and δ=∞) | ≤ 130mV |
| Open circuit output voltage Vout pp (at Vin and δ=0.15mm) | ≥900mV |
| Cut-off frequency | >20kHz |
| Operating temperature | -30°C ~ +70°C |
| Storage temperature | -40°C ~ +85°C |
Diagram
Pictures
